PART |
Description |
Maker |
IRLML6302TRPBF IRLML6302PBF07 |
HEXFET? Power MOSFET technology, Ultra Low On-Resistance, P-Channel MOSFET generation v technology
|
International Rectifier
|
IRF7304 |
Generation V Technology
|
International Rectifier
|
V23990-K420-A60-0B-PM V23990-K420-A60-0A-PM V23990 |
Mitsubishi Generation 6.1 technology
|
Vincotech
|
IRLML2803TRPBF |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
8T49N012 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
IDT8T49N004I |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
KRF7401 |
Generation V Technology Ultra Low On-Resistance N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
SGP20N60 SGP20N6009 SGW20N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
IRF7201 IRF7201PBF IRF7201TR |
Generation V Technology 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGW30N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGW50N60HS SGW50N60HS09 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|